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Magneto resistive RAM (MRAM) Market

Magneto Resistive RAM (MRAM) Market Size, Share & Segment By Type (Spin-Transfer Torque MRAM (STT-MRAM), Toggle MRAM) By Application (Enterprise Storage, Automotive, Aerospace & Defense, Consumer Electronics, Robotics And Others), By Regions And Global Forecast 2022-2028

Report Id: SNS/SEMI/2315 | July 2022 | Region: Global | 127 Pages

Report Scope & Overview:

The Magneto Resistive RAM (MRAM) Market Size was valued at USD 0.58 billion in 2021, and is expected to reach USD 1.4 billion by 2028, and grow at a CAGR of 13.5% over the forecast period 2022-2028.

Magnetic RAM, also known as magneto resistive RAM, is a type of non-volatile RAM memory that stores data using magnetic charges. Magneto resistive RAM is the result of a merger of static and dynamic RAM preferences. The gadget is used to improve electronic items and assist electronic items in storing a large amount of information, guarantees quick access while using less battery power than existing electronic memory.

Magneto Resistive RAM (MRAM) Market Revenue Graph

MARKET DYNAMICS:

KEY DRIVERS:

  • Memory technologies that are less efficient are Displaced.

  • Wearables and flexible electronic products are becoming increasingly popular.

RESTRAINTS:

  • MRAM has a high manufacturing cost.

OPPORTUNITIES:

  • MRAM is used in automotive and utilities.

  • New products for embedded and standalone memories are being introduced.

CHALLENGES: 

  • This will be covered under the final version of the report.

IMPACT OF COVID-19: 

The severe impact of COVID-19 on global value chains (including France and other countries throughout Europe) is creating challenges for the integration of final manufactured products. Some of the key challenges faced by supply chain stakeholders include warehouse staffing, the need for direct distribution, and intelligent and responsive allocation of goods across different distribution channels. Because of their ability to meet the needs of this pandemic, manufacturers are focusing on Tier-1 suppliers to mitigate risks. As the manufacturing process lags to meet these ever-increasing needs, demand exceeds the limited number of available supplies. The shelf life of raw materials is increasing due to a supply shortage and low fabrication efficiency, which is raising raw material prices. The company's revenue is impacted by highly fluctuating raw material costs and ineffective price management. Due to the shutdown of production units, the increased use of electronic components in modern manufacturing has an impact on the consumer market. Even though raw materials are plentiful, due to a fabrication shortage, manufacturers are unable to produce the components quickly enough to meet demand.

Based on Type, the Magneto resistive RAM (MRAM) market is segmented into Spin-Transfer Torque MRAM (STT-MRAM) and Toggle MRAM. The market for STT technology is expected to dominate and maintain its dominance during the forecast period 2022-2028. DRAM technology is expected to reach its limits soon and be replaced by STT technology due to the latter's high endurance characteristics. Several market participants are working on this replacement.

Based on Application, the Magneto resistive RAM (MRAM) market is segmented into Enterprise Storage, Automotive, Aerospace & Defense, Consumer Electronics, Robotics and Others. Over the forecast period, the magneto resistive random access memory technology for the aerospace and defence industry is expected to grow at the fastest CAGR. This is due to the high-temperature endurance of this technology, which makes it the most advantageous option. Furthermore, because of its faster reading and writing capabilities, the technology is best suited for consumer electronics applications; however, the high costs associated with designing such devices limit its growth in consumer electronics applications.

COMPETITIVE LANDSCAPE:

The key players in the Magneto resistive RAM (MRAM) market are Toshiba Corporation, Everspin Technologies, Spin Memory, Samsung Electronics, Taiwan Semiconductor Manufacturing Company, NVE Corporation, Avalanche Technology, Honeywell International, Numem and IBM Corporation.

MARKET SEGMENTATION:

BY TYPE

  • Spin-Transfer Torque MRAM (STT-MRAM)

  • Toggle MRAM

BY APPLICATION

  • Enterprise Storage

  • Automotive

  • Aerospace & Defense

  • Consumer Electronics

  • Robotics

  • Others

Magneto Resistive RAM (MRAM) Market Segment Pie Chart

REGIONAL ANALYSIS:

The market was dominated by the North American region. This dominance can be attributed to the presence of major players, as well as the increased R&D activities in this region. Furthermore, the pressing need to meet rising demand for faster computation, greater scalability, and lower power consumption is expected to fuel the growth of Magneto resistive random access memory devices. The Asia Pacific region is expected to emerge as the fastest-growing region, owing to improvements and advancements in data center infrastructure, aided by increased adoption of cloud computing and internet usage. Furthermore, sales of wearable electronics and mobile phones have high growth potential in the market. Because of its low-cost labor, the Asia-Pacific region is home to a number of memory manufacturers and foundry service providers, because of the low cost of labor and the availability of raw materials.

REGIONAL COVERAGE:

  • North America

    • USA

    • Canada

    • Mexico

  • Europe

    • Germany

    • UK

    • France

    • Italy

    • Spain

    • The Netherlands

    • Rest of Europe

  • Asia-Pacific

    • Japan

    • south Korea

    • China

    • India

    • Australia

    • Rest of Asia-Pacific

  • The Middle East & Africa

    • Israel

    • UAE

    • South Africa

    • Rest of Middle East & Africa

  • Latin America

    • Brazil

    • Argentina

    • Rest of Latin America

 

Magneto Resistive RAM (MRAM) Market Report Scope:
Report Attributes Details
Market Size in 2021 US$ 577 Million
Market Size by 2028 US$ 1.4 Billion
CAGR CAGR of 13.5% From 2022 to 2028
Base Year 2021
Forecast Period 2022-2028
Historical Data 2017-2020
Report Scope & Coverage Market Size, Segments Analysis, Competitive  Landscape, Regional Analysis, DROC & SWOT Analysis, Forecast Outlook
Key Segments • By Type (Spin-Transfer Torque MRAM (STT-MRAM), Toggle MRAM)
• By Application (Enterprise Storage, Automotive, Aerospace & Defense, Consumer Electronics, Robotics And Others)
Regional Analysis/Coverage North America (USA, Canada, Mexico), Europe
(Germany, UK, France, Italy, Spain, Netherlands,
Rest of Europe), Asia-Pacific (Japan, South Korea,
China, India, Australia, Rest of Asia-Pacific), The
Middle East & Africa (Israel, UAE, South Africa,
Rest of Middle East & Africa), Latin America (Brazil, Argentina, Rest of Latin America)
Company Profiles RAM (MRAM) market are Toshiba Corporation, Everspin Technologies, Spin Memory, Samsung Electronics, Taiwan Semiconductor Manufacturing Company, NVE Corporation, Avalanche Technology, Honeywell International, Numem and IBM Corporation.
Key Drivers • Memory technologies that are less efficient are Displaced.
• Wearables and flexible electronic products are becoming increasingly popular.
Restraints • MRAM has a high manufacturing cost.


Frequently Asked Questions (FAQ) :

The Magneto resistive RAM (MRAM) Market size was valued at 577 billion in 2021 at a CAGR of 13.5%.

The market value is expected to reach USD 1.4 billion by 2028.

The market has been segmented with respect to type and application.

The key players in the Magneto resistive RAM (MRAM) market are Toshiba Corporation, Everspin Technologies, Spin Memory, Samsung Electronics, Taiwan Semiconductor Manufacturing Company, NVE Corporation, Avalanche Technology, Honeywell International, Numem and IBM Corporation.

Manufacturers, Consultants, Association, Research Institutes, private and university libraries, suppliers, and distributors of the product.


Table of Contents

 

1. Introduction

1.1 Market Definition

1.2 Scope

1.3 Research Assumptions

 

2. Research Methodology

 

3. Market Dynamics

3.1 Drivers

3.2 Restraints

3.3 Opportunities

3.4 Challenges

 

4. Impact Analysis

4.1 COVID 19 Impact Analysis

4.2 Impact of Ukraine-Russia War

 

5. Value Chain Analysis

 

6. Porter’s 5 forces model

 

7.  PEST Analysis

  

8. Magneto resistive RAM (MRAM) Market Segmentation, by type

8.1Introduction

8.2 Spin-Transfer Torque MRAM (STT-MRAM)

8.3 Toggle MRAM

 

9. Magneto resistive RAM (MRAM) Market Segmentation, by application

9.1Introduction

9.2 Enterprise Storage

9.3 Automotive

9.4 Aerospace & Defense

9.5 Consumer Electronics

9.6 Robotics

9.7 Others

 

10. Regional Analysis

10.1 Introduction

10.2 North America

10.2.1 USA

10.2.2 Canada

10.2.3 Mexico

10.3 Europe

10.3.1 Germany

10.3.2 UK

10.3.3 France

10.3.4 Italy

10.3.5 Spain

10.3.6 The Netherlands

10.3.7 Rest of Europe

10.4 Asia-Pacific

10.4.1 Japan

10.4.2 South Korea

10.4.3 China

10.4.4 India

10.4.5 Australia

10.4.6 Rest of Asia-Pacific

10.5 The Middle East & Africa

10.5.1 Israel

10.5.2 UAE

10.5.3 South Africa

10.5.4 Rest

10.6 Latin America

10.6.1 Brazil

10.6.2 Argentina

10.6.3 Rest of Latin America

 

11.Company Profiles

11.1 IBM Corporation

11.1.1 Financial

11.1.2 Products/ Services Offered

11.1.3 SWOT Analysis

11.1.4 The SNS view

11.2 Toshiba Corporation

11.3 Everspin Technologies

11.4 Spin Memory

11.5 Samsung Electronics

11.6 Taiwan Semiconductor Manufacturing Company

11.7 NVE Corporation

11.8 Avalanche Technology

11.9 Honeywell International

11.10 Numem

 

12.Competitive Landscape

12.1 Competitive Benchmark

12.2 Market Share analysis

12.3 Recent Developments

 

13.Conclusion

 

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Secondary Research

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