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GaN Semiconductor Devices Market

GaN Semiconductor Devices Market Size, Share & Segment by type (Depletion Mode, Cascode Mode, GaN Radio Frequency Devices, Opto-Semiconductors, Power Semiconductors, RF Semiconductors) by wafer size ( 2”, 4”, 6”, 8”) by component (Transistor, Diode, Rectifier, Power IC, Others)by application(Signal, Power, Communications, Consumer Electronics, Automotive, Military & Defense, Medical,Lighting and Lasers Supplies and Inverters, Radio Frequency, Power Drives, Others) by Regions and Global Forecast 2022-2028

Report Id: SNS/SEMI/1305 | May 2022 | Region: Global | 125 Pages

Report Scope & Overview:

GaN Semiconductor Devices Market size was valued at USD 1.78 billion in 2021 and is expected to expand at a compound annual growth rate (CAGR) of 22.1% from 2021 to 2028 and it will reach USD 7.20 Billion in 2028.

The gallium nitride (GaN) semiconductor has strong chemical and electrical properties such as full speed and high power dissipation. Therefore, they are ready for use on a variety of switching devices. New innovations in the semiconductor industry will pave the way for better gallium nitride semiconductor devices. The global gallium nitride semiconductor device market is growing rapidly and will grow significantly in the next few years.

GaN Semiconductor Devices Market Revenue Graph

MARKET DYNAMICS: 

KEY DRIVERS

The semiconductor industry has found GaN as a complete alternative to silicon in the use of medium power. GaN provides innovative features in terms of energy efficiency at high voltages, inceasingily highest reliability, and flexibility in power adjustment, power factor adjustment, and power boosting, surpassing pure silicon. GaN semiconductor devices are widely used in high-powered computer / hardware and electrical systems, uninterrupted power supply systems (UPS), computer systems, and wireless charging. Electric vehicles and hybrid electric vehicles, brake control systems, and train pulls have created the need for semiconductor power devices capable of delivering high speeds, high operating temperatures, and low resistance. This sort GaN electric devices the selection of the automotive industry in every aspect — show, efficiency, and quality.

RESISTANT

The SiC provides better power efficiency and an improved power capture capability for a number of power functions, including power adjustment, power feature adjustment, power boost, and power transmission. SiC is an ideal substitute for high power silicon exchange as it offers advanced features such as high voltage efficiency, high reliability, and flexibility in power adjustment, power feature adjustment, and power boost, surpassing pure silicon by several leagues. . Even though GaN offers a variety of SiC benefits, including high power efficiency, it does not have the potential to deliver improved performance such as SiC in high voltage conditions (> 1 kV). With no excessive natural rigidity and solidity of SiC material, SiC stands out as the best choice for high-voltage semiconductor devices.

Opportunity

Smart production, smart cities, private cars, and connected transportation can all be seen thanks to the wide availability of 5G infrastructure. According to the Cisco Visual Networking Index, approximately 12% of global mobile traffic is expected to be in 5G mobile connectivity by 2022. 5G wireless channels are needed to integrate technology that brings efficiency, performance, and value. GaN solutions are an important part of delivering these features. Compared to metal-oxide-semiconductor (LDMOS) dispersed metal (LDMOS), GaN-on-SiC offers significant improvements in the efficiency and performance of the 5G channel.

Challenges

All major GaN semiconductor industry processes (whether front or rear) such as raw material purchasing, pasting, dyeing, wafer bonding and manufacturing, mounting and cutting, complete device construction, system assembly, assembly testing. , and packaging requires higher costs than the Si semiconductor industry. The major rational motive for this is that all processes are very convoluted, relatively new, use advanced technology, and require modern, high-cost equipment. ized in areas with high temperatures (from tri-methyl gallium and ammonia)

BY TYPE

Part of the opto-semiconductors dominated the market in 2021 and accounted for more than 32.2% of global revenue. This follows the adoption of opto-semiconductors in the automotive industry and consumer electronics. In addition, opto-semiconductors are widely used in systems such as Light Detection and Ranging and pulsed laser, which accurately reflects partial growth.

The proportion of GaN radio frequency devices is expected to be extended to the highest CAGR in the forecast period. The partial growth may be due to increased use of Gallium Nitride radio frequency devices in a variety of applications across industries such as consumer electronics and defense, which are the first recipients on the market.

By APPLICATION

The Information & Communication Technology (ICT) segment dominated the market in 2021 and accounted for more than 23% of global revenue. The partial growth may be due to the increasing adoption of Internet-of-Things (IoT) technology worldwide. IoT devices require efficient and inexpensive components that facilitate the exchange of information on a regular basis. Additionally, these semiconductors are widely used in Distributed Antenna System (DAS), small cell, and remote radio head congestion. They are also used in data centers, servers, base stations, transmission lines, satellite communications, and basic transceiver channels, among others.

IMPACT OF COVID-19

The COVID-19 epidemic has led to the closure of many major economies. As a result, sales of electronic products have been reduced and supply chains have been disrupted. In addition, many economies are facing huge losses of revenue as production units are closed due to land closures. The whole situation had a negative impact on the demand for Gallium Nitride (GaN) semiconductor devices by 2021. 

REGIONAL ANALYSIS:

The North American regional market dominated the market in 2021 and accounted for more than 31.9% of global revenue. Increasing investment from the defense and aerospace industry in research and development is encouraging market growth in the region. In addition, the support provided by government agencies to semiconductor companies is expected to drive the market in the region.The Asia Pacific regional market is expected to emerge as the fastest growing regional market in the forecast period, due to rapid technological advances leading to increased demand for more efficient and effective RF components. Countries like China and Japan in the region are some of the largest producers of consumer electronics, including LED display devices, smartphones, and sports consoles. This is an important factor that enhances regional market growth. The growing defense budget in countries such as China, India, and South Korea has led to an increase in demand for robust telecommunications equipment, which is expected to further the demand for GaN-based RF devices. Significant increase in the adoption of wireless power and the proliferation of telecommunications infrastructure in the Asia Pacific region are driving the market.

COMPETITIVE LANDSCAPE

The major key players in GaN Semiconductor Devices market are Osram Opto-semiconductors, Panasonic Semiconductors, Texas Instruments, RF Micro Devices Corporation, Cree Incorporated, Toshiba, Aixtron SE, Infineon Technologies, Gallia Semiconductor, ROHM Company Limited, Fujitsu Ltd,  NXP Semiconductors, Koninklijke Philips N.V., Nichia Corporation,  Qorvo, and others.

MARKET SEGMENTATION:

BY TYPE

  • Depletion Mode

  • Cascode Mode

  • GaN Radio Frequency Devices

  • Opto-Semiconductors

  • Power Semiconductors

  • RF Semiconductors

BY WAFER SIZE

  • 2”

  • 4”

  • 6”

  • 8”

BY COMPONENTS

  • Transistor

  • Diode

  • Rectifier

  • Power IC

  • Others

BY APPLICATION

  • Signal

  • Power

  • Communications

  • Consumer Electronics

  • Automotive

  • Military & Defense

  • Medical

  • Lighting and Lasers

  • Supplies and Inverters

  • Radio Frequency

  • Other

GaN Semiconductor Devices Market Segment Pie Chart

REGIONAL ANALYSIS:

The North American regional market dominated the market in 2021 and accounted for more than 31.9% of global revenue. The Asia Pacific regional market is expected to emerge as the fastest growing regional market in the forecast period.Countries like China and Japan in the region are some of the largest producers of consumer electronics, including LED display devices, smartphones, and sports consoles. This is an important factor that enhances regional market growth. The growing defense budget in countries such as China, India, and South Korea has led to an increase in demand for robust telecommunications equipment, which is expected to further the demand for GaN-based RF devices. Significant increase in the adoption of wireless power and the proliferation of telecommunications infrastructure in the Asia Pacific region are driving the market.

REGIONAL COVERAGE:

  • North America

    • USA

    • Canada

    • Mexico

  • Europe

    • Germany

    • UK

    • France

    • Italy

    • Spain

    • The Netherlands

    • Rest of Europe

  • Asia-Pacific

    • Japan

    • south Korea

    • China

    • India

    • Australia

    • Rest of Asia-Pacific

  • The Middle East & Africa

    • Israel

    • UAE

    • South Africa

    • Rest of Middle East & Africa

  • Latin America

    • Brazil

    • Argentina

    • Rest of Latin America

 

GaN Semiconductor Devices Market Report Scope:
Report Attributes Details
Market Size in 2021 US$ 1.78 Billion
Market Size by 2028 US$ 7.20 Billion
CAGR CAGR of 22.1% From 2022 to 2028
Base Year 2021
Forecast Period 2022-2028
Historical Data 2017-2020
Report Scope & Coverage Market Size, Segments Analysis, Competitive  Landscape, Regional Analysis, DROC & SWOT Analysis, Forecast Outlook
Key Segments • by type (Depletion Mode, Cascode Mode, GaN Radio Frequency Devices, Opto-Semiconductors, Power Semiconductors, RF Semiconductors)
• by wafer size ( 2”, 4”, 6”, 8”)
• by component (Transistor, Diode, Rectifier, Power IC, Others)
• by application(Signal, Power, Communications, Consumer Electronics, Automotive, Military & Defense, Medical,Lighting and Lasers Supplies and Inverters, Radio Frequency, Power Drives, Others)
Regional Analysis/Coverage North America (USA, Canada, Mexico), Europe
(Germany, UK, France, Italy, Spain, Netherlands,
Rest of Europe), Asia-Pacific (Japan, South Korea,
China, India, Australia, Rest of Asia-Pacific), The
Middle East & Africa (Israel, UAE, South Africa,
Rest of Middle East & Africa), Latin America (Brazil, Argentina, Rest of Latin America)
Company Profiles Osram Opto-semiconductors, Panasonic Semiconductors, Texas Instruments, RF Micro Devices Corporation, Cree Incorporated, Toshiba, Aixtron SE, Infineon Technologies, Gallia Semiconductor, ROHM Company Limited
Key Drivers • GaN as a complete alternative to silicon in the use of medium power
RESTRAINTS • SiC provides better power efficiency and an improved power capture capability for a number of power functions


Frequently Asked Questions (FAQ) :

GaN Semiconductor Devices  Market size was valued at 1.78 billion in 2021 at a CAGR of 22.1%.

Top-down research, bottom-up research, qualitative research, quantitative research, and Fundamental research.

Continuous technological development in the GaN ecosystem driving the market.

North America region dominates the GaN Semiconductor Devices  Market.

Manufacturers, Consultants, Association, Research Institutes, private and university libraries, suppliers, and distributors of the product.


Table of Contents

 

1. Introduction

1.1 Market Definition

1.2 Scope

1.3 Research Assumptions

 

2. Research Methodology

 

3. Market Dynamics

3.1 Drivers

3.2 Restraints

3.3 Opportunities

3.4 Challenges

 

4. Impact Analysis

4.1COVID 19 Impact Analysis

4.2Impact of Russian Ukraine War

 

5. Value Chain Analysis

 

6. Porter’s 5 forces model

 

7.  PEST Analysis

 

8.Global GaN Semiconductor Devices  Market Segmentation, by type

8.1 Introduction

8.2 Depletion Mode

8.3 Cascode Mode

8.4 GaN Radio Frequency Devices

8.5 Opto-Semiconductors

8.6 Power Semiconductors

8.7 RF Semiconductors

 

9.Global GaN Semiconductor Devices  Market Segmentation, by wafer size

9.1 Introduction

9.2 2”

9.3 4”

9.4 6”

9.5 8”

 

10.Global GaN Semiconductor Devices  Market Segmentation, By componant

10.1  Introduction

10.2     Transistor

10.3Diode

10.4Rectifier

10.5Power IC

10.6 Others

 

11.Global GaN Semiconductor Devices  Market Segmentation, By application

11.1 Introduction

11.2 Signal

11.3 Power

11.4 Communications

11.5 Consumer Electronics

11.6 Automotive

11.7 Military & Defense

11.8 Medical

11.9 Lighting and Lasers

11.10 Supplies and Inverters

11.11 Radio Frequency

11.12 Other

 

12. Regional Analysis

12.1 Introduction

12.2 North America

12.2.1 USA

12.2.2    Canada

12.2.3    Mexico

12.3        Europe

12.3.1    Germany

12.3.2    UK

12.3.3    France

12.3.4    Italy

12.3.5    Spain

12.3.6    The Netherlands

12.3.7    Rest of Europe

12.4        Asia-Pacific

12.4.1    Japan

12.4.2    South Korea

12.4.3    China

12.4.4    India

12.4.5    Australia

12.4.6    Rest of Asia-Pacific

12.5        The Middle East & Africa

12.5.1    Israel

12.5.2    UAE

12.5.3    South Africa

12.5.4    Rest

12.6        Latin America

12.6.1    Brazil

12.6.2    Argentina

12.6.3    Rest of Latin America

 

13.Company Profiles

13.1  Fujitsu Ltd.

13.1.1 Financial

13.1.2 Products/ Services Offered

13.1.3 SWOT Analysis

13.1.4 The SNS view

13.2 Panasonic Semiconductors

13.3 Texas Instruments

13.4 RF Micro Devices Corporation

13.5 Osram Opto-semiconductors

13.6 Cree Incorporated

13.7 Toshiba

13.8 Aixtron SE

13.9 Infineon Technologies

13.10 Gallia Semiconductor

13.11 ROHM Company Limited

13.12 NXP Semiconductors

13.13 Koninklijke Philips N.V.

13.13 Nichia Corporation

13.15 Qorvo .

 

14. Competitive Landscape

14.1 Competitive Benchmark

14.2 Market Share analysis

14.3 Recent Developments

 

15. Conclusion

 

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Secondary Research

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